TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level JAN 2N930 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units - Emitter Voltage 45 V CEO - 60 V O Emitter - 6.0 V EBO 30 I C 0 Total Power Dissipation T = +25 C 300 A P 0 T T = +25 C 600 C 0 - 55 to +200 C T T , J TO- 18* THERMAL CHARACTERISTICS (TO-206AA) Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 97 R 0 0 1) Derate linearly 2.0 mW/ = +25 A 0 0 2) Derate linearly 4.0 mW/ C C 0 ELECTRICAL CHARACTERISTICS (T = +25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V (BR)CEO I 45 C - Base Cutoff Current V = 6 I 10 V 10 Emitter - V = 6.0 Vdc I EB EBO 10 V = 5.0 Vdc 5.0 EB - Emitter Cutoff Current I CES V 2.0 CE - Base Cutoff Current I CEO V 2.0 CE 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page = 5.0 Vdc Adc Collector = 45 Vdc Adc Collector Adc Adc Base Cutoff Current CB = 45 Vdc Adc CBO CB 0 Vdc Adc Collector = 10 mAdc Vdc Emitter Breakdown Voltage Collector package outline *See appendix A for = +25 C above T C C above T JC C/W to stg Operating & Storage Junction Temperature Range (2) mW (1) mAdc Collector Current Vdc Base Voltage CB Vdc Base Voltage Collector Vdc Collector 2N930, JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio I = 10 = 5.0 Vdc C CE 100 300 h FE I = 500 = 5.0 Vdc 150 C CE I = 5.0 Vdc 600 C CE - Emitter Saturation Voltage V CE(sat) I = 0.5 m 1.0 C B Base - Emitter Saturation Voltage V BE(sat) I 0.6 1.0 C B DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit Forward Current Transfer Ratio h I = 500 = 5.0 Vdc, f = 30 MHz 1.5 6.0 C CE Small - Signal Short - Circuit Forward Current Transfer Ratio h I = 5.0 Vdc, f = 1.0 kHz 150 600 C CE Small - Signal Short - h ib V 25 32 E Small - Signal Short - Circui t Output Admittance h ob V 1.0 E Output Capacitance C obo V = 0, 100 kHz 1.0 MHz 8.0 E V = 10 =10k CE C g Test 1: f = 100 Hz 5 Test 2: f = 1.0 kH z 3 Test 3: f = 10 kHz 3 (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle dB NF Adc R = 5 Vdc I Noise Figure CB f = 5.0 Vdc, I pF CB = 1.0 mAdc, f = 1.0 kHz = 5.0 Vdc, I CB = 1.0 mAdc, f = 1.0 kHz = 5.0 Vdc, I Circuit Input Impedance = 1.0 mAdc, V fe Adc, V fe = 0.5 mAdc = 10 mAdc, I Vdc Adc = 10 mAdc, I Vdc Collector = 10 mAdc, V Adc, V Adc, V Forward