JANSF2N2369AUB Microchip

JANSF2N2369AUB electronic component of Microchip
JANSF2N2369AUB Microchip
JANSF2N2369AUB Bipolar Transistors - BJT
JANSF2N2369AUB  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of JANSF2N2369AUB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANSF2N2369AUB Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JANSF2N2369AUB
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT RH Small-Signal BJT
Datasheet: JANSF2N2369AUB Datasheet (PDF)
Price (USD)
1: USD 301.8937 ea
Line Total: USD 301.89 
Availability : 0
  
QtyUnit Price
1$ 301.8937
25$ 181.1376

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 301.8937
25$ 181.1376

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANSF2N2369AUB from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANSF2N2369AUB and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AUB 2N4449 JAN 2N2369AU 2N2369AUBC * JANTX 2N2369AUA JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit 2N2369A / U / UA 15 Collector-Emitter Voltage V Vdc CEO 2N4449 / UB / UBC 20 2N2369A / U / UA 4.5 TO-18 (TO-206AA) Emitter-Base Voltage V Vdc EBO 2N4449 / UB / UBC 6.0 2N2369A Collector-Base Voltage V 40 Vdc CBO Collector-Emitter Voltage I 40 Vdc CES (1) Total Power Dissipation 2N2369A 2N4449 0.36 (1, 5) T = +25C UA, UB, UBC P 0.36 W A T (4) U 0.50 TO-46 (TO-206AB) Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Value Unit Thermal Resistance, Ambient-to-Case 2N2369A 2N4449 400 C/W R JA (5) UA, UB, UBC 400 SURFACE MOUNT U 350 UA Note: 1. Derate linearly 2.06 mW/C above T = +25C. A 2. Derate linearly 4.76 mW/C above T = +95C. C 3. Derate linearly 3.08 mW/C above T = +70C. C 4. Derate linearly 3.44 mW/C above T = +54.5C. A 5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads. SURFACE MOUNT UB & UBC ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A (UBC = Ceramic Lid Version) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 15 Vdc (BR)CEO I = 10mAdc C SURFACE MOUNT Collector-Base Cutoff Current U (Dual Transistor) I 0.4 Adc CES V = 20Vdc CE T4-LDS-0057 Rev. 2 (081394) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage V = 4.5Vdc 10 EB I Adc EBO Emitter-Base Cutoff Current V = 4.0Vdc 0.25 EB Collector- Base Breakdown Voltage V = 40Vdc 10 CB I Adc CBO Collector-Base Cutoff Current V = 32Vdc 0.2 CB (1) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 10mAdc, V = 0.35Vdc 40 120 C CE h FE I = 30mAdc, V = 0.4Vdc 30 120 C CE I = 10mAdc, V = 1.0Vdc 40 120 C CE I = 100mAdc, V = 1.0Vdc 20 120 C CE Collector-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.20 C B V Vdc CE(sat) I = 30mAdc, I = 3.0mAdc 0.25 C B I = 100mAdc, I = 10mAdc 0.45 C B Base-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.70 0.85 C B V Vdc BE(sat) I = 30mAdc, I = 3.0mAdc 0.90 C B I = 100mAdc, I = 10mAdc 0.80 1.20 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h 5.0 10 fe I = 10mAdc, V = 10Vdc, f = 100MHz C CE Output Capacitance C 4.0 pF obo V = 5.0Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 5.0 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 12 s on I = 10mAdc I = 3.0mAdc, I = -1.5mAdc C B1 B2 Turn-Off Time t 18 s off I = 10mAdc I = 3.0mAdc, I = -1.5mAdc C B1 B2 Charge Storage Time t 13 s S I = 10mAdc I = 10mAdc, I = 10mAdc C B1 B2 (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0057 Rev. 2 (081394) Page 2 of 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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