JANSR2N2222AUB Microchip

JANSR2N2222AUB electronic component of Microchip Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANSR2N2222AUB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANSR2N2222AUB Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JANSR2N2222AUB
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 50V 0.8A 3-Pin UB
Datasheet: JANSR2N2222AUB Datasheet (PDF)
Price (USD)
1: USD 112.7963 ea
Line Total: USD 112.8 
Availability : 87
  
Ship by Mon. 11 Aug to Fri. 15 Aug
QtyUnit Price
1$ 112.7963
5$ 93.555
10$ 89.6044
25$ 82.7662
50$ 82.3462

Availability 87
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 112.7963
5$ 93.555
10$ 89.6044
25$ 82.7662
50$ 82.3462

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANSR2N2222AUB from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANSR2N2222AUB and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA JANSL 50K Rads (Si) 2N2221AUB 2N2222AUB JANSR 100K Rads (Si) 2N2221AUBC 2N2222AUBC JANSF 300K Rads (Si) JANSG 500K Rads (Si) JANSH 1MEG Rads (Si) ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C Total Power Dissipation T = +25C TO-18 (TO-206AA) A 2N2221A, 2N2222A 2N2221A, L 2N2222A, L 0.5 P W T 2N2221AUA 2N2222AUA 0.65 2N2221AUB, UBC 2N2222AUB, UBC 0.50 Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit 4 PIN Thermal Resistance, Junction-to-Ambient 2N2221AUA, 2N2222AUA 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 2N2221AUB, UBC 2N2222AUB, UBC 325 1. Derate linearly 3.08 mW/C above T > +37.5C A 2. Derate linearly 4.76 mW/C above T > +63.5C A 3 PIN 2N2221AUB, 2N2222AUB 2N2221AUBC, 2N2222AUBC (UBC = Ceramic Lid Version) T4-LDS-0042 Rev. 3 (100247) Page 1 of 7 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I = 10mAdc C V 50 Vdc (BR)CEO Collector-Base Cutoff Current Adc V = 75Vdc 10 CB I CBO Adc V = 60Vdc 10 CB Emitter-Base Cutoff Current Adc V = 6.0Vdc 10 EB I EBO = 4.0Vdc Adc V 10 EB Collector-Emitter Cutoff Current V = 50Vdc CE I 50 Adc CES (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 h C CE FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage I = 150mAdc, I = 15mAdc 0.3 C B V Vdc CE(sat) I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage I = 150mAdc, I = 15mAdc 0.6 1.2 C B V Vdc BE(sat) I = 500mAdc, I = 50mAdc 2.0 C B T4-LDS-0042 Rev. 3 (100247) Page 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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