2SC28 81-O/2SC2881-Y Features Power Amplifier Applications Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating Silicon Power Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-89 Thermal Resistance: 250/W Junction to Ambient A Parameter Symbol Rating Unit K B V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO Emitter-Base Voltage V 5 V EBO C E I Collector Current 800 mA C I Base Current 160 mA B D 500 G H P Collector Power Dissipation mW C (Note2) J 1000 F Classification Of h L L FE Rank O Y 1 2 3 Range 80-160 120-240 DIMENSIONS Marking CO1 CY1 INCHES MM DIM NOTE MIN MAX MIN MAX Note 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, A 0.169 0.185 4.30 4.70 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. B 0.061 1.55 TYP. 2 C 0.154 0.171 3.91 4.35 Note 2. Mounted on ceramic substrate (250mm x 0.8t) D 0.031 0.047 0.80 1.20 E 0.089 0.104 2.25 2.65 F TYP. 0.118 3.00 Pin Configuration - Top View Internal Structure G 0.013 0.020 0.33 0.52 H 0.015 0.021 0.38 0.53 C C J 0.014 0.017 0.35 0.44 K 0.055 0.063 1.40 1.60 L 1.50 TYP. 0.059 B Suggested Solder Pad Layout 1.900 0.075 mm inches 0.800 E 0.032 2.600 3.200 B C E 0.102 0.126 0.900 0.035 1.400 0.055 1.500 0.059 4.400 0.173 1.400 0.055 Rev.3-3-12012020 1/4 MCCSEMI.COM2SC28 81-O/2SC2881-Y Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =1mA, I =0 Collector-Base Breakdown Voltage 120 V (BR)CBO C E Collector-Emitter Breakdown Voltage V 120 V I =10mA, I =0 (BR)CEO C B V I =1mA, I =0 Emitter-Base Breakdown Voltage 5.0 V (BR)EBO E C I V =120V, I =0 Collector-Base Cutoff Current 0.1 A CBO CB E I V =5V, I =0 Emitter-Base Cutoff Current 0.1 A EBO EB C DC Current Gain h 80 240 V =5V, I =100mA FE CE C V I =500mA, I =50mA Collector-Emitter Saturation Voltage 1.0 V CE(sat) C B V V =5V, I =500mA Base-Emitter Voltage 1.0 V BE CE B f V =5V, I =100mA Transition Frequency 120 MHz T CE C Collector Output Capacitance C 30 pF V =10V, I =0, f=1.0MHz ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM