BC8 57BV Features Epitaxial Die Construction Complementary NPN Type Available BC847BV Ultra-Small Surface Mount Package PNP Halogen Free. Green Device (Note 1) Plastic Encapsulate Moisture Sensitivity Level 1 Transistors Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 SOT-563 Storage Temperature Range: -55 to +150 Thermal Resistance: 833/W Junction to Ambient Paramet er Symb o l Rat ing Un it V Collector-Base Voltage -50 V A CBO V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage - 5 V B EBO C Collector Current I -100 mA C Collector Power Dissipation P 150 mW C D G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, M <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K H L Internal Structure C1 B2 E2 6 5 4 DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.006 0.011 0.15 0.30 Marking: K5V 1 2 3 B 0.043 0.051 1.10 1.30 E1 B1 C2 C 0.059 0.067 1.50 1.70 0.020 0.50 TYP. D G 0.035 0.043 0.90 1.10 H 0.059 0.067 1.50 1.70 K 0.022 0.026 0.55 0.65 L 0.004 0.011 0.10 0.30 M 0.004 0.007 0.10 0.18 Rev.3-4-07122021 1/4 MCCSEMI.COMBC8 57BV Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-10A, I =0 Collector-Base Breakdown Voltage -50 V (BR)CBO C E V I =-10mA, I =0 Collector-Emitter Breakdown Voltage -45 V (BR)CEO C B V I =-1A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-30V, I =0 Collector-Base Cutoff Current -15 nA CBO CB E I V =-5V, I =0 Emitter-Base Cutoff Current -100 nA EBO EB C h V =-5V, I =-2mA DC Current Gain 220 475 FE CE C I =-10mA, I =-0.5mA -0.1 V C B Collector-Emitter Saturation Voltage V CE(sat) I =-100mA, I =-5mA -0.4 V C B I =-10mA, I =-0.5mA -0.7 V C B Base-Emitter Saturation Voltage V BE(sat) I =-100mA, I =-5mA -0.9 V C B V =-5V, I =-2mA -0.6 -0.75 V CE C Base-Emitter Voltage V BE V =-5V, I =-10mA -0.82 V CE C C V =-10V, I =0, f=1MHz Collector Output Capacitance 4.5 pF ob CB E f V =-5V, I =-10mA, f=100MHz Transition Frequency 100 MHz T CE C V =-5V, I =-0.2mA, f=1KHz CE C Noise Figure NF 10 dB R =2K, f=200Hz S Rev.3-4-07122021 2/4 MCCSEMI.COM