MMBT3904 HE3 Features Halogen Free.Gree Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant Suffix Designates RoHS Amplifier Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 357/W Junction to Ambient SOT-23 Thermal Resistance: 185/W Junction to Case Parameter Symbol Rating Unit A D V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO B C V Emitter-Base Voltage 6 V EBO Collector Current I 200 mA C F E Collector Power Dissipation P 350 mW C Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G H J <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L K DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 B E G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-2-08012020 1/4 MCCSEMI.COMMMBT3904HE3 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =10A, I =0 (BR)CBO C E (2) Collector-Emitter Breakdown Voltage V 40 V I =1mA, I =0 (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =30V, I =0 Collector-Base Cutoff Current 50 nA CBO CB E I V =30V, V =3V Collector Cutoff Current 50 nA CEX CE BE h 40 V =1V, I =0.1mA FE(1) CE C h V =1V, I =1mA 70 FE(2) CE C (2) h V =1V, I =10mA DC Current Gain 100 300 FE(3) CE C h V =1V, I =50mA 60 FE(4) CE C h 30 V =1V, I =100mA FE(5) CE C I =10mA, I =1mA 0.2 V C B Collector-Emitter Saturation Voltage V CE(sat) I =50mA, I =5mA 0.3 V C B I =10mA, I =1mA 0.65 0.85 V C B V Base-Emitter Saturation Voltage BE(sat) 0.95 V I =50mA, I =5mA C B Transition Frequency f 300 MHz V =20V, I =10mA, f=100MHz T CE C C V =5V, I =0, f=1MHz, Output Capacitance 4.0 pF cbo CB E C V =0.5V, I =0, f=1MHz, Input Capacitance 8.0 pF ibo BE C V =5V, I =0.1mA CE C Noise Figure NF 5 dB R =1K, f=10Hz to 15.7KHz S t Delay Time 35 ns V =3V, I =10mA d CC C V =0.5V, I =1mA t Rise Time 35 ns BE B1 r Storage Time t 200 ns V =3V, I =10mA s CC C I =I =1mA Fall Time t 50 ns B1 B2 f Note: 2. Pulse Width 300s, Duty Cycle2.0% 1AM=Product Type Marking Code 1AM Y Y=Date Code Marking Rev.3-2-08012020 2/4 MCCSEMI.COM