MMBT5551-TP Micro Commercial Components (MCC)

MMBT5551-TP electronic component of Micro Commercial Components (MCC)
MMBT5551-TP Micro Commercial Components (MCC)
MMBT5551-TP Bipolar Transistors - BJT
MMBT5551-TP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT5551-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT5551-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 300 mW Surface Mount SOT-23
Datasheet: MMBT5551-TP Datasheet (PDF)
Price (USD)
21000: USD 0.0144 ea
Line Total: USD 302.4 
Availability : 1178550
  
Ship by Fri. 31 Oct to Thu. 06 Nov
QtyUnit Price
21000$ 0.0144
30000$ 0.0142
60000$ 0.0134
120000$ 0.013

Availability 25649
Ship by Wed. 29 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1375
10$ 0.0813
100$ 0.0512
500$ 0.0372
1000$ 0.0345
3000$ 0.0297
6000$ 0.0275
9000$ 0.0253


Availability 2764
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 50
Multiples : 50
QtyUnit Price
50$ 0.0666
500$ 0.0456
3000$ 0.0389
6000$ 0.0379
24000$ 0.0366


Availability 1178550
Ship by Fri. 31 Oct to Thu. 06 Nov
MOQ : 21000
Multiples : 3000
QtyUnit Price
21000$ 0.0144
30000$ 0.0142
60000$ 0.0134
120000$ 0.013

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5551-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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600 300 MMBT5551 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistor Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A Thermal Resistance: 417/W Junction to Ambient D B C Parameter Symbol Rating Unit V Collector-Base Voltage 180 V CBO F E V Collector-Emitter Voltage 160 V CEO Emitter-Base Voltage V 6 V EBO G H J Collector Current I mA C L P Collector Power Dissipation mW C K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, DIMENSIONS <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 Internal Structure F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 C H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 Marking: G1 B E Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 1/4 MCCSEMI.COM Rev.3-4-12012020MMBT5551 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 180 V (BR)CBO C E Collector-Emitter Breakdown Voltage V 160 V I =1mA, I =0 (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =120V, I =0 Collector Cutoff Current 50 nA CBO CB E Emitter-Base Cutoff Current I 50 nA V =4V, I =0 EBO EB C 80 h V =5V, I =1.0mA FE1 CE C V =5V, I =10mA DC Current Gain h 100 300 CE C FE2 50 h V =5V, I =50mA FE3 CE C V 0.2 V Collector-Emitter Saturation Voltage I =50mA, I =5mA CE(sat) C B I =50mA, I =5mA Base-Emitter Saturation Voltage V V 1.0 C B BE(sat) f Transition Frequency 100 300 V =5V, I =10mA, f=30MHz T MHz CE C 2/4 MCCSEMI.COM Rev.3-4-12012020

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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