MMBTA05,MMBTA06 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching NPN Small Signal Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 General Purpose Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Amplifier Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-23 Thermal Resistance: 417 /W Junction to Ambient Parameter Symbol Rating Unit A D MMBTA05 60 Collector-Base V V CBO Voltage MMBTA06 80 3 B C MMBTA05 60 1 2 Collector-Emitter V V CEO Voltage MMBTA06 80 F E V Emitter-Base Voltage 4 V EBO I Continuous Collector Current 500 mA C G H J P Power Dissipation 300 mW D L K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Marking: C 0.047 0.055 1.20 1.40 MMBTA05: 1H D 0.034 0.041 0.85 1.05 MMBTA06: 1GM E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 Internal Structure H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 3 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 1 1.BASE 0.031 2.EMITTER 0.800 3.COLLECTOR 2 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-5-11112021 1/4 MCCSEMI.COMMMBTA05,MMBTA06 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions MMBTA05 60 V Collector-Base Breakdown V I =100A, I =0 (BR)CBO C E Voltage MMBTA06 80 V MMBTA05 60 Collector-Emitter V V I =1mA, I =0 (BR)CEO C B Breakdown Voltage MMBTA06 80 Emitter-Base Breakdown Voltage V 4 V I =100A, I =0 (BR)EBO E C MMBTA05 0.1 A V =60V, I =0 CB E Collector Cutoff Current I CBO MMBTA06 0.1 A V =80V, I =0 CB E Collector Cutoff Current I 1 A V =60V, I =0 CEO CE B Emitter Cutoff Current I 0.1 mA V =3V, I =0 EBO EB C h 100 400 V =1V, I =10mA FE(1) CE C DC Current Gain h 100 V =1V, I =100mA FE(2) CE C Collector-Emitter Saturation Voltage V 0.25 V I =100mA, I =10mA CE(sat) C B Base-Emitter Saturation Voltage V 1.2 V I =100mA, I =10mA BE(sat) C B f V =2V, I =10mA, f=100MHz Transition Frequency 100 MHz T CE C Rev.3-5-11112021 2/4 MCCSEMI.COM