MMSTA42 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Halogen Free. Green Device (Note 1) NPN Silicon High Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Voltage Transistor Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient SOT-323 Parameter Symbol Rating Unit V Collector-Base Voltage 300 V CBO A V Collector-Emitter Voltage 300 V CEO D 3 V Emitter-Base Voltage 6 V EBO C I B Continuous Collector Current 200 mA C P 1 2 Power Dissipation 200 mW D F E Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. H J G K L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 Marking: K3M 0.045 0.053 1.15 1.35 B C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. Internal Structure E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 3 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 1 L 0.010 0.018 0.26 0.46 1.BASE 2.EMITTER QseecqrcbQmjbcpN bJ wmsr 3.COLLECTOR 2 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMSTA42 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 300 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage* 300 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =200V, I =0 CBO CB E Emitter Cutoff Current I 0.1 A V =6V, I =0 EBO EB C h 25 V =10V, I =1mA FE(1) CE C DC Current Gain* h 40 V =10V, I =10mA FE(2) CE C h 40 V =10V, I =30mA FE(3) CE C Collector-Emitter Saturation Voltage V 0.5 V I =20mA, I =2mA CE(sat) C B Base-Emitter Saturation Voltage V 0.9 V I =20mA, I =2mA BE(sat) C B Transition Frequency f 50 MHz V =20V, I =10mA, f=100MHz T CE C Collector output Capacitance C 3 pF V =20V, I =0,f=1MHz cb CB E *.Pulse test: Pulse Width 300s,Duty Cycle 2.0%. Rev.3-3-12012020 2/4 MCCSEMI.COM