UMT1N-TP Micro Commercial Components (MCC)

UMT1N-TP electronic component of Micro Commercial Components (MCC)
UMT1N-TP Micro Commercial Components (MCC)
UMT1N-TP Bipolar Transistors - BJT
UMT1N-TP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UMT1N-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMT1N-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.UMT1N-TP
Manufacturer:Micro Commercial Components (MCC)
Category:Bipolar Transistors - BJT
Description:Bipolar Transistors - BJT -50V -150mA 150mW
Datasheet:UMT1N-TP Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.75 ea
Line Total: USD 0.75 
Availability : 0
  
QtyUnit Price
1$ 0.75
10$ 0.46
100$ 0.2703
500$ 0.1958
1000$ 0.1749
3000$ 0.1485
6000$ 0.1353
9000$ 0.1232
  

Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.75
10$ 0.46
100$ 0.2703
500$ 0.1958
1000$ 0.1749
3000$ 0.1485
6000$ 0.1353
9000$ 0.1232

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMT1N-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMT1N-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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UMT1N Features Two 2SA1037AK Chips in a Package Mounting Possible with SOT-363 Automatic Mounting Machines Transistor Elements are Independent, Eliminating Interference Dual PNP Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Transistors Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-363 Thermal Resistance: 833 /W Junction to Ambient Parameter Symbol Rating Unit G 6 5 4 V Collector-Base Voltage -60 V CBO C B V Collector-Emitter Voltage -50 V CEO 1 2 3 V Emitter-Base Voltage -6 V EBO I Continuous Collector Current -150 mA C A M H P Power Dissipation 150 mW D K L Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, J <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Marking: T1 A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 Internal Structure 0.026 0.65 D TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 6 5 4 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1 2 3 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMUMT1N Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-50A, I =0 Collector-Base Breakdown Voltage -60 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -50 V (BR)CEO C B Emitter-Base Breakdown Voltage V -6 V I =-50A, I =0 (BR)EBO E C Collector Cutoff Current I -0.1 A V =-60V, I =0 CBO CB E Emitter Cutoff Current I -0.1 A V =-6V, I =0 EBO EB C DC Current Gain h 120 560 V =-6V, I =-1mA FE CE C Collector-Emitter Saturation Voltage V -0.5 V I =-50mA, I =-5mA CE(sat) C B Transition Frequency f 140 MHz V =-12V, I =2mA, f=100MHz T CE E Output Capacitance C 5 pF V =-12V, I =0,f=1MHz ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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