BC846BS Nexperia

BC846BS electronic component of Nexperia
BC846BS Nexperia
BC846BS Bipolar Transistors - BJT
BC846BS  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC846BS Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846BS Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.BC846BS
Manufacturer:Nexperia
Category:Bipolar Transistors - BJT
Description:TRANSISTOR, NPN, 65V, 100MA, SOT363
Datasheet:BC846BS Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 0.134 ea
Line Total: USD 0.67 
Availability : 0
  
QtyUnit Price
5$ 0.134
50$ 0.0994
100$ 0.0697
500$ 0.064
1500$ 0.0631
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 0.134
50$ 0.0994
100$ 0.0697
500$ 0.064
1500$ 0.0631

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Transition Frequency Ft
LoadingGif
 
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We are delighted to provide the BC846BS from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846BS and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 24 August 2009 Product data sheet 1. Product prole 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA BC846BS SOT363 SC-88 BC856BS BC846BPN 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualied 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 65 V CEO I collector current - - 100 mA C h DC current gain V =5V I = 2 mA 200 300 450 FE CE CBC846BS NXP Semiconductors 65 V, 100 mA NPN/NPN general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym020 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BC846BS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 5. Marking codes 1 Type number Marking code BC846BS *E5 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 80 V CBO V collector-emitter voltage open base - 65 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 200 mA BM t 1ms p 1 P total power dissipation T 25 C - 200 mW tot amb BC846BS 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 24 August 2009 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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