BCW66HR Nexperia

BCW66 series 45 V, 800 mA NPN general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 45 V CEO I collector current - - 800 mA C I peak collector current single pulse t 1 ms - - 1 A CM p 1 h DC current gain V = 1 V I = 100 mA T = 25 C FE CE C amb BCW66F 100 - 250 BCW66G 160 - 400 BCW66H 250 - 600 1 pulsed: t 300 s, 0.02 pNexperia BCW66 series 45 V, 800 mA NPN general-purpose transistor 5 Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter 3 C collector B E 1 2 sym123 6 Ordering information Table 3. Ordering information Type number Package Name Description Version BCW66F TO-236AB plastic surface-mounted package 3 leads SOT23 BCW66G BCW66H 7 Marking Table 4. Marking Type number Marking code 1 BCW66F EQ% 1 BCW66G ER% 1 BCW66H ES% 1 % = placeholder for manufacturing site code 8 Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 800 mA C I peak collector current single pulse t 1 ms - 1 A CM p I base current - 100 mA B BCW66x SER All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved. Product data sheet Rev. 1 21 April 2017 2 / 14