PBHV8115TLHR Nexperia

PBHV8115TLHR electronic component of Nexperia
PBHV8115TLHR Nexperia
PBHV8115TLHR Bipolar Transistors - BJT
PBHV8115TLHR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBHV8115TLHR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV8115TLHR Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBHV8115TLHR
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 150 V, 1 A NPN high-voltage low VCEsat BISS transistor
Datasheet: PBHV8115TLHR Datasheet (PDF)
Price (USD)
1: USD 0.6125 ea
Line Total: USD 0.61 
Availability : 10711
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 0.6125
10$ 0.3813
100$ 0.2243
500$ 0.1661
1000$ 0.1364
3000$ 0.1221
6000$ 0.1155
9000$ 0.1089
24000$ 0.1089

Availability 5820
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1149


Availability 11260
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 2299
Multiples : 1
QtyUnit Price
2299$ 0.1131


Availability 10711
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6125
10$ 0.3813
100$ 0.2243
500$ 0.1661
1000$ 0.1364
3000$ 0.1221
6000$ 0.1155
9000$ 0.1089
24000$ 0.1089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBHV8115TLHR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV8115TLHR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBHV8115TLH 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 10 January 2017 Product data sheet 1. General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a small SOT23 CEsat (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM Small SMD plastic package AEC-Q101 qualified 3. Applications Power management LCD backlighting LED driver for LED chain module Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 150 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 2 A CM p h DC current gain V = 10 V I = 50 mA T = 25 C 70 - 300 FE CE C amb

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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