PBHV8115Z,115 Nexperia

PBHV8115Z,115 electronic component of Nexperia
PBHV8115Z,115 Nexperia
PBHV8115Z,115 Bipolar Transistors - BJT
PBHV8115Z,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBHV8115Z,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBHV8115Z,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBHV8115Z,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS HV BISS TAPE-7
Datasheet: PBHV8115Z,115 Datasheet (PDF)
Price (USD)
1: USD 0.7925 ea
Line Total: USD 0.79 
Availability : 1552
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.7925
10$ 0.5
100$ 0.3105
500$ 0.242
1000$ 0.2189
2000$ 0.198
5000$ 0.1782
10000$ 0.1782
25000$ 0.1716

Availability 2845
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1332
Multiples : 1
QtyUnit Price
1332$ 0.1952
1341$ 0.194
1350$ 0.1927
1359$ 0.1913
1368$ 0.1901
1378$ 0.1887
1387$ 0.1875


Availability 1940
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1401
Multiples : 1
QtyUnit Price
1401$ 0.1857


Availability 1552
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7925
10$ 0.5
100$ 0.3105
500$ 0.242
1000$ 0.2189
2000$ 0.198
5000$ 0.1782
10000$ 0.1782
25000$ 0.1716


Availability 943
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.84
10$ 0.567
50$ 0.434
54$ 0.3528
147$ 0.3332


Availability 2845
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1350
Multiples : 1
QtyUnit Price
1350$ 0.1927
1359$ 0.1913
1368$ 0.1901
1378$ 0.1887
1387$ 0.1875


Availability 1940
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1401
Multiples : 1
QtyUnit Price
1401$ 0.1857

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBHV8115Z,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBHV8115Z,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBHV8115Z 150 V, 1 A NPN high-voltage low V (BISS) transistor CEsat Rev. 02 9 December 2008 Product data sheet 1. Product prole 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. 1.2 Features n High voltage n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n AEC-Q101 qualied n Medium power SMD plastic package 1.3 Applications n LED driver for LED chain module n LCD backlighting n High Intensity Discharge (HID) front lighting n Automotive motor management n Hook switch for wired telecom n Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 150 V CEO I collector current - - 1 A C h DC current gain V =10V 100 250 - FE CE I =50mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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