PBSS301NX,115 Nexperia

PBSS301NX 12 V, 5.3 A NPN low V (BISS) transistor CEsat Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PX. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 12 V CEO I collector current - - 5.3 A C I peak collector current single pulse - - 10.6 A CM t 1ms p 1 R collector-emitter I =4A -28 40 m CEsat C saturation resistance I =200 mA B 1 Pulse test: t 300 s 0.02. pNXP Semiconductors PBSS301NX 12 V, 5.3 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1emitter 2 2 collector 3 3base 1 321 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS301NX SC-62 plastic surface-mounted package collector pad for SOT89 good heat transfer 3 leads 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS301NX *5B 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS301NX 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 17 November 2009 2 of 15