PBSS301PX,115 Nexperia

PBSS301PX,115 electronic component of Nexperia
PBSS301PX,115 Nexperia
PBSS301PX,115 Bipolar Transistors - BJT
PBSS301PX,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS301PX,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS301PX,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS301PX,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS BISS TAPE-7
Datasheet: PBSS301PX,115 Datasheet (PDF)
Price (USD)
1000: USD 0.19 ea
Line Total: USD 190 
Availability : 0
  
QtyUnit Price
1000$ 0.19

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.2488


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.2808
2000$ 0.2561
5000$ 0.2395
10000$ 0.223
25000$ 0.2202


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7642
10$ 0.6518
100$ 0.4865
500$ 0.3822


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.19


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7605
10$ 0.8316
100$ 0.4526
500$ 0.3552
1000$ 0.2796
5000$ 0.2496


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 36
Multiples : 1
QtyUnit Price
36$ 0.2638
100$ 0.2254
250$ 0.2209


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.2597

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS301PX,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS301PX,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS301PX 12 V, 5.3 A PNP low V (BISS) transistor CEsat Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NX. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 12 V CEO I collector current - - 5.3 A C I peak collector current single pulse -- 10.6 A CM t 1ms p 1 R collector-emitter I = 4A -28 40 m CEsat C saturation resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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