X-On Electronics has gained recognition as a prominent supplier of PBSS4021PT,215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021PT,215 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021PT,215 Nexperia

PBSS4021PT,215 electronic component of Nexperia
PBSS4021PT,215 Nexperia
PBSS4021PT,215 Bipolar Transistors - BJT
PBSS4021PT,215  Semiconductors

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See Product Specifications
Part No. PBSS4021PT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 20 V 3.5 A 155MHz 1.1 W Surface Mount TO-236AB
Datasheet: PBSS4021PT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8185 ea
Line Total: USD 0.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1608

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 0.9742
10 : USD 0.8073
100 : USD 0.602
500 : USD 0.4729
1000 : USD 0.3655

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 0.9742
10 : USD 0.8073
100 : USD 0.602
500 : USD 0.4729
1000 : USD 0.3655

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.3456
6000 : USD 0.3117
15000 : USD 0.3042

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0869
6000 : USD 0.0857
9000 : USD 0.085
12000 : USD 0.0844
15000 : USD 0.0832

0
Ship by Mon. 02 Jun to Thu. 05 Jun
MOQ : 5
Multiples : 5
5 : USD 0.2219
50 : USD 0.2171
150 : USD 0.2138
500 : USD 0.2105

0
Ship by Thu. 22 May to Mon. 26 May
MOQ : 1
Multiples : 1
1 : USD 0.8185
10 : USD 0.4661
100 : USD 0.2993
500 : USD 0.2272
1000 : USD 0.2068
3000 : USD 0.1806
6000 : USD 0.1647
9000 : USD 0.1579

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1636

0
Ship by Mon. 26 May to Fri. 30 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1774

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
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Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the PBSS4021PT,215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021PT,215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS4021PT 20 V, 3.5 A PNP low V (BISS) transistor CEsat Rev. 01 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NT. 1.2 Features Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 3.5 A C I peak collector current single pulse -- 8A CM t 1ms p 1 R collector-emitter I = 4A -55 82.5 m CEsat C saturation resistance I = 400 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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