PBSS5320X,135 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low V (BISS) transistor CEsat Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 27NXP Semiconductors Product data sheet 20 V, 3 A PBSS5320X PNP low V (BISS) transistor CEsat FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage V CEsat V collector-emitter voltage 20 V CEO High collector current capability: I and I C CM I collector current (DC) 3 A C Higher efficiency leading to less heat generation I peak collector current 5 A CM Reduced printed-circuit board requirements. R equivalent on-resistance 105 m CEsat PINNING APPLICATIONS Power management PIN DESCRIPTION DC/DC converters 1 emitter Supply line switching 2 collector Battery charger 3 base LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, 2 buzzers and motors). 3 DESCRIPTION 1 PNP low V transistor in a SOT89 plastic package. CEsat sym079 321 NPN complement: PBSS4320X. MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT89) and symbol. PBSS5320X S45 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PBSS5320X SC-62 plastic surface mounted package collector pad for good heat SOT89 transfer 3 leads 2004 Nov 04 2