PBSS5350Z,135 Nexperia

PBSS5350Z 50 V, 3 A PNP low VCEsat (BISS) transistor 18 November 2019 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 CEsat (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC/DC converters Supply line switching Battery charger LED backlighting Linear voltage regulation (LDO) Driver in low supply voltage applications, e.g. lamps, LEDs Inductive load driver (for example relays, buzzers, motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I collector current - - -3 A C I peak collector current single pulse t 1 ms - - -5 A CM p R collector-emitter I = -2 A I = -200 mA T = 25 C 1 - 120 150 m CEsat C B amb saturation resistance 1 Pulsed test: t 300 s 0.02 pNexperia PBSS5350Z 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter E 1 2 3 4 C collector sym132 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5350Z SC-73 plastic, surface-mounted package with increased heatsink 4 SOT223 leads 2.3 mm pitch 6.5 mm x 3.5 mm x 1.65 mm body 7. Marking Table 4. Marking codes Type number Marking code PBSS5350Z PB5350 PBSS5350Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 18 November 2019 2 / 12