PBSS5360ZX Nexperia

PBSS5360ZX electronic component of Nexperia
PBSS5360ZX Nexperia
PBSS5360ZX Bipolar Transistors - BJT
PBSS5360ZX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS5360ZX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5360ZX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS5360ZX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 60V 3A PNP low VCEsat transistor
Datasheet: PBSS5360ZX Datasheet (PDF)
Price (USD)
1: USD 0.6338 ea
Line Total: USD 0.63 
Availability : 1679
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 0.6338
10$ 0.3912
100$ 0.23
500$ 0.1705
1000$ 0.1584
2000$ 0.1342
5000$ 0.1221
10000$ 0.1188
25000$ 0.1122

Availability 1679
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6338
10$ 0.3912
100$ 0.23
500$ 0.1705
1000$ 0.1584
2000$ 0.1342
5000$ 0.1221
10000$ 0.1188
25000$ 0.1122


Availability 2066
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.784
5$ 0.6076
10$ 0.5012
99$ 0.1918
271$ 0.182

   
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RoHS - XON
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We are delighted to provide the PBSS5360ZX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5360ZX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 19 February 2014 Product data sheet 1. General description PNP low V Breakthrough In Small Signal (BISS) transistor in a medium power CEsat SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z. 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -3 A C I peak collector current t 1 ms single pulse - - -6 A CM p R collector-emitter I = -2 A I = -200 mA pulsed - - 225 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 2, 4 2 C collector 1 3 E emitter 1 2 3 3 4 C collector SC-73 (SOT223) sym028 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5360Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS5360Z P5360Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -80 V CBO V collector-emitter voltage open base - -60 V CEO V emitter-base voltage open collector - -7 V EBO I collector current - -3 A C I peak collector current t 1 ms single pulse - -6 A CM p I base current - -500 mA B I peak base current t 1 ms single pulse - -1 A BM p P total power dissipation 1 - 0.65 W tot 2 - 1 W 3 - 1.35 W PBSS5360Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 February 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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