X-On Electronics has gained recognition as a prominent supplier of PBSS5540Z,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS5540Z,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS5540Z,115 Nexperia

PBSS5540Z,115 electronic component of Nexperia
PBSS5540Z,115 Nexperia
PBSS5540Z,115 Bipolar Transistors - BJT
PBSS5540Z,115  Semiconductors

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See Product Specifications
Part No. PBSS5540Z,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 40V 5A LO VCESAT
Datasheet: PBSS5540Z,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4325 ea
Line Total: USD 0.43 
Availability - 73750
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
868
Ship by Tue. 01 Jul to Fri. 04 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4828
50 : USD 0.3864
150 : USD 0.233
1000 : USD 0.1733
2000 : USD 0.1578
5000 : USD 0.1485

73750
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4325
10 : USD 0.3137
100 : USD 0.2277
250 : USD 0.2167
500 : USD 0.1859
1000 : USD 0.1452
2000 : USD 0.1331
5000 : USD 0.1254
10000 : USD 0.1254

845
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.49
10 : USD 0.4144
20 : USD 0.3654
50 : USD 0.2842
78 : USD 0.2436

155200
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 2711
Multiples : 1
2711 : USD 0.173
10000 : USD 0.1542
100000 : USD 0.1293

1180
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 366
Multiples : 1
366 : USD 0.7111
551 : USD 0.4719
1000 : USD 0.3198

76630
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 2711
Multiples : 1
2711 : USD 0.173
10000 : USD 0.1542

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PBSS5540Z,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS5540Z,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS5540Z 40 V low VCEsat PNP transistor 20 September 2019 Product data sheet 1. General description PNP low V transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. CEsat 2. Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. AEC-Q101 qualified 3. Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -5 A C I peak collector current single pulse t 1 ms - - -10 A CM p R collector-emitter I = -2 A I = -200 mA t 300 s - 55 80 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 4 C 2 C collector B 3 E emitter E 1 2 3 4 C collector sym132 SC-73 (SOT223)Nexperia PBSS5540Z 40 V low VCEsat PNP transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5540Z SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code PBSS5540Z PB5540 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -5 A C I peak collector current single pulse t 1 ms - -10 A CM p I peak base current - -2 A BM P total power dissipation T 25 C 1 - 1.35 W tot amb 2 - 2 W T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 92 K/W th(j-a) junction to ambient 2 - - 62 K/W 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . PBSS5540Z All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 20 September 2019 2 / 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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