PHPT61003PYX Nexperia

PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Power management Loadswitch Linear mode voltage regulator Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -100 V CEO voltage I collector current - - -3 A C I peak collector current t 1 ms single pulse - - -8 A CM p R collector-emitter I = -2 A I = -200 mA pulsed - 110 180 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PHPT61003PY 100 V, 3A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E sym132 4 B base 1 2 3 4 mb C collector LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61003PY LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61003PY 1003PAB PHPT61003PY All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 13 January 2014 2 / 15