Product Information

PMBT3904VS,115

PMBT3904VS,115 electronic component of Nexperia

Datasheet
Transistors Bipolar - BJT GENERAL PURPOSE TRANSISTOR
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0761 ea
Line Total: USD 304.4

34920 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
65960 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 4000
Multiples : 4000

Stock Image

PMBT3904VS,115
Nexperia

4000 : USD 0.0912
8000 : USD 0.0764
24000 : USD 0.0749

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor 17 September 2019 Product data sheet 1. General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Double general-purpose switching transistor Board-space reduction Ultra small and flat lead SMD plastic package 3. Applications General-purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 40 V CEO voltage I collector current - - 200 mA C h DC current gain V = 1 V I = 10 mA T = 25 C 100 180 300 FE CE C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 B2 E2 1 E1 emitter TR1 6 5 4 2 B1 base TR1 TR2 3 C2 collector TR2 TR1 4 E2 emitter TR2 1 2 3 E1 B1 C2 5 B2 base TR2 sym020 SOT666 6 C1 collector TR1Nexperia PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3904VS SOT666 plastic surface-mounted package 6 leads SOT666 7. Marking Table 4. Marking codes Type number Marking code PMBT3904VS ZC 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse t 1 ms - 200 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 2 - 240 mW tot amb Per device P total power dissipation T 25 C 1 2 - 360 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Reflow soldering is the only recommended soldering method. PMBT3904VS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 17 September 2019 2 / 10

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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