2N3439 NTE

2N3439 & 2N3440 Silicon NPN Transistor Power Amplifier & High Speed Switch TO39 Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) C CollectorEmitter Voltage, V CEO 2N3439 .................................................................... 350V 2N3440 .................................................................... 250V Collector Base Voltage, V CBO 2N3439 .................................................................... 450V 2N3440 .................................................................... 300V EmitterBase Voltage, V .......................................................... 7V EBO Continuous Collector Current, I ...................................................... 1A C Total Device Dissipation (T = +25C), P ......................................... 800mW A D Derate Above 25 C .................................................... 4.75mW/ C Total Device Dissipation (T = +25C), P ............................................. 5W C D Derate Above 25 C .................................................... 28.5mW/ C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 10mA, R = 470 , (BR)CEO C BB1 2N3439 V = 6V, L = 25mH (min), 350 V BB1 f = 30 to 60Hz 2N3440 250 V Collector Cutoff Current I CEO 2N3439 V = 300V 2.0 A CE 2N3440 V = 200V 2.0 A CE 2N3439 I V = 450V, V = 1.5V 5.0 A CEX CE BE 2N3440 V = 300V, V = 1.5V 5.0 A CE BE 2N3439 I V = 360V 2.0 A CBO CB V = 450V 5.0 A CB 2N3440 V = 250V 2.0 A CB V = 300V 5.0 A CB Emitter Cutoff Current I V = 7V 10 A EBO EBElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 20mA, V = 10V 40 160 FE C CE I = 2.0mA, V = 10V 30 C CE I = 0.2mA, V = 10V 10 C CE CollectorEmitter Saturation Voltage V I = 50mA, I = 4mA 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 4mA 1.3 V BE(sat) C B Dynamic Characteristics Magnitude of Common Emitter h I = 10mA, V = 10V, f = 5MHz 3.0 15 fe C CE SmallSignal ShortCircuit Forward Current Transfer Ratio Forward Current Transfer Ratio h I = 5mA, V = 10V, f = 1kHz 25 fe C CE Output Capacitance C V = 10V, I = 0, 100kHz f 1MHz 10 pF obo CB E Input Capacitance C V = 5V, I = 0,100kHz f 1MHz 75 pF ibo CB C Note 1. Pulse Test Pulse Width = 300s, Duty Cycle 2%370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)