2N3442 Silicon NPN Transistor High Power Industrial TO3 Type Package Description: The 2N3442 is a silicon NPN power transistor in a TO 3 type package designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: Collector Emitter Sustaining Voltage: V = 140V Min CEO(sus) Excellent Second Breakdown Capability Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 140V CEO Collector Base Voltage, V ...................................................... 160V CBO EmitterBase Voltage, V ........................................................... 7V EB Collector Current, I C Continuous .................................................................. 10A Peak ....................................................................... 15A Total Power Dissipation (T = +25C), P ........................................... 117W C D Derate Above 25 C ...................................................... 0.67W/ C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R ..................................... 1.5 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0 140 V CEO(sus) C B Collector Cutoff Current I V = 140V, I = 0 200 mA CEO CE B I V = 140V, V = 1.5V 5 mA CEX CE BE(off) V = 140V, V = 1.5V, T = +150C 30 mA CE BE(off) C Emitter Cutoff Current I V = 7V, I = 0 5 mA EBO BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 4V, I = 3A 20 70 FE CE C V = 4V, I = 10A 7.5 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 2A 5 V CE(sat) C B BaseEmitter On Voltage V V = 4V, I = 10A 5.7 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 4V, I = 2A, f = 40kHz, Note 2 80 kHz T CE C test SmallSignal Current Gain h V = 4V, I = 2A, f = 1kHz 12 72 fe CE C test Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Note 2. f = h f T fe test .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case