BC556/557/558/559/560 PNP Epitaxial Silicon Transistor October 2012 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High Voltage: BC556, V = -65V CEO Low Noise: BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V V Collector-Emitter Voltage CEO : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V Emitter-Base Voltage -5 V V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 C J T Storage Temperature -65 ~ 150 C STG Electrical Characteristics T = 25 C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -30V, I =0 -15 nA CBO CB E h DC Current Gain V = -5V, I =2mA 110 800 FE CE C V (sat) Collector-Emitter Saturation Volt- I = -10mA, I = -0.5mA -90 -300 mV CE C B age I = -100mA, I = -5mA -250 -650 mV C B V (sat) Collector-Base Saturation Voltage I = -10mA, I = -0.5mA -700 mV BE C B I = -100mA, I = -5mA -900 mV C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -600 -660 -750 mV BE CE C V = -5V, I = -10mA -800 mV CE C f Current Gain Bandwidth Product V = -5V, I = -10mA, 150 MHz T CE C f=10MHz C Output Capacitance V = -10V, I =0, f=1MHz 6 pF ob CB E NF Noise Figure : BC556/557/558 V = -5V, I = -200 A 2 10 dB CE C : BC559/560 f=1KHz, R =2K 1 4 dB G : BC559 V = -5V, I = -200 A 1.2 4 dB CE C : BC560 R =2Kf=30~15000MHz 1.2 2 dB G h Classification FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556/557/558/559/560 Rev. B0 1 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Typical Performance Characteristics 1000 -50 V = -5V CE -45 I = -400A B I = -350A -40 B I = -300A -35 B 100 I = -250A B -30 I = -200A -25 B -20 I = -150A B 10 -15 I = -100A B -10 I = -50A B -5 -0 1 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100 V V , COLLECTOR-EMITTER VOLTAGE I mA , COLLECTOR CURRENT CE C Figure 1. Static Characteristic Figure 2. DC current Gain -100 -10 V = -5V CE I = -10 I C B -10 -1 VBE(sat) -1 -0.1 VCE(sat) -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 V V , BASE-EMITTER VOLTAGE BE IC mA , COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage 1000 VCE = -5V f=1MHz I = 0 10 E 100 10 1 -1 -10 -1 -10 -100 V V , COLLECTOR-BASE VOLTAGE I mA , COLLECTOR CURRENT CB C Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556/557/558/559/560 Rev. B0 2 V (sat), V (sat) V , SATURATION VOLTAGE BE CE C (pF), CAPACITANCE I mA , COLLECTOR CURRENT ob C I mA , COLLECTOR CURRENT C f MHz , CURRENT GAIN-BANDWIDTH PRODUCT T h , DC CURRENT GAIN FE