NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector-Base Voltage, V . 32V CBO Emitter-Base Voltage, V . 10V EBO Collector Current, I . 1A C Power Dissipation, P 650mW C Operating Junction Temperature, T +90 C J Storage Temperature Range, T . -55 to +90C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Voltage V I = 200A, I = 0 32 - - V CBO C E Collector Cutoff Current I V = 10V, I = 0 - - 25 A CBO CB E DC Current Gain h V = 0, I = 50mA 63 - 295 FE1 CB E h V = 0, I = 300mA 69 - 273 FE2 CB E Common-Emitter Cutoff Frequency f V = 2V, I = 10mA 10 - - kHz e CB E Collector-Emitter Saturation Voltage V I = 500mA, I = 50mA - 0.17 - V CE(sat) C B Noise Figure NF V = 5V, I = 5mA, f = 1kHz - - 25 dB CB E.240 (6.09) Dia Max .410 (10.4) Max .750 (19.1) Min .018 (0.45) .071 (1.82) Dia Base Collector Emitter