NTE108 and NTE1081 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 (TO92) and NTE108 1 (TO106) are silicon NPN transistors designed for low noise, high frequency amplifiers, 1GHz local oscillatore, nonneutralized IF amplifiers, and nonsaturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3 C/W thJC Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . +200 C/W thJA Note 1. R is measured with the device soldered into a typical printed circuit board. JA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 3mA, I = 0, Note 2 15 V (BR)CEO C B Collector Base Breakdown Voltage V I = 1A, I = 0 30 V (BR)CBO C E Emitter Base Breakdown Voltage V I = 10A, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 10 nA CBO CB E Note 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 1%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 3mA, V = 1V, Note 2 20 FE C CE I = 8mA, V = 10V, Note 2 20 200 C CE Collector Emitter Saturation Voltage V I = 10mA, I = 1mA 0.4 V CE(sat) C B Base Emitter Saturation Voltage V I = 10mA, I = 1mA 1.0 V BE(sat) C B Small Signal Characteristics Current Gain Bandwidth Product f I = 4mA, V = 10V, 600 MHz T C CE f = 100MHz, Note 2 Output Capacitance C V = 0V, I = 0, f = 140kHz 3.0 pF obo CB E V = 10V, I = 0, f = 140kHz 1.7 pF CB E Input Capacitance C V = 0.5V, I = 0, f = 140kHz 2.0 pF ibo EB C Noise Figure NF I = 1mA, V = 6V, 6 dB C CE R = 400 , f = 60MHz S Functional Test Common Emitter Amplifier Power G I = 6mA, V = 12V, 15 dB pe C CB Gain f = 200MHz (G + G < 20dB) fd re Power Output P I = 8mA, V = 15V, 30 mW out C CB f = 500MHz Oscillator Collector Efficiency I = 8mA, V = 15V, 25 % C CB P = 30mW, f = 500MHz out Note 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 1%. TO92 TO106 .135 (3.45) Min .207 (5.28) Dia .210 (5.33) .060 Max Seating Plane (1.52) .180 Min (4.57) .500 .021 (.445) Dia Max (12.7) Min Seating .500 Plane (12.7) Min E B C .018 (0.45) .100 (2.54) .100 (2.54) Dia .050 (1.27) B .165 (4.2) Max C E .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max