We are the renowned NTE158 Bipolar Transistors - BJT seller and distributer in the USA, India, Europe, Australia, and beyond. NTE158 Bipolar Transistors - BJT is a manufacturer from NTE. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

NTE158

NTE158 electronic component of NTE
Part No.NTE158
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Trans GP BJT PNP 32V 1A 3-Pin TO-1
Datasheet: NTE158 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 11.9306 ea
Line Total: USD 59.65

4 - Global Stock
Ships to you between
Wed. 29 May to Tue. 04 Jun
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 5
Multiples : 1
5 : USD 11.9306
25 : USD 9.4762
50 : USD 9.345
100 : USD 9.1875
250 : USD 8.4394
500 : USD 8.3212
1000 : USD 8.19
2500 : USD 7.8094

11 - WHS 2


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 13.5954
2 : USD 9.787
5 : USD 9.2547

We proudly offer the NTE158 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTE158 Bipolar Transistors - BJT.
     
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RoHS - XON
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NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low power, large signal audio applications. Absolute Maximum Ratings: (T = +25 C) A Collector Base Voltage, V ....................................................... 32V CBO CollectorEmitter Voltage (R 500 ), V ......................................... 32V BE CER EmitterBase Voltage, V ......................................................... 10V EBO Collector Current, I ................................................................. 1A C Base Current, I ................................................................. 40mA B Power Dissipation (T = +25 C), P .............................................. 550mW A C Derate Above 25 C ..................................................... 0.3mW/ C Storage Temperature Range, T ........................................... 55 to +90 C stg Lead Temperature (During Soldering, 1/16 1/32 from case for 5sec), T .............. +245 C L Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 200 A, I = 0 32 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 200 A, I = 0 10 V (BR)EBO E C Collector Cutoff Current I V = 10V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, T = +75 C 500 A EBO EB J DC Current Gain h V = 1V, I = 300mA 50 90 175 FE CB C BaseEmitter Voltage V V = 1V, I = 300mA 280 600 mV BE CE C Forward Current Transfer Cutoff f 10 20 kc hfe Frequency Output Capacitance C V = 5V, I = 0 0.45mc 80 105 pF ob CB E Rev. 713.240 (6.09) Dia Max .410 (10.4) Max .250 (6.35) Min .018 (0.45) .071 (1.82) Dia Base Collector Emitter

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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