NTE159MCP NTE

NTE159MCP Silicon Matched Complementary Transistors (Contains NTE123AP (NPN) and NTE159 (PNP)) Audio Amplifier, Switch TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE123AP .................................................................. 40V NTE159 ..................................................................... 80V Collector Base Voltage, V CBO NTE123AP .................................................................. 60V NTE159 ..................................................................... 80V EmitterBase Voltage, V EBO NTE123AP ................................................................... 6V NTE159 ...................................................................... 5V Continuous Collector Current, I C NTE123AP ............................................................... 600mA NTE159 .................................................................. 800mA Total Device Dissipation (T = +25C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 5.0mW/ C Total Device Dissipation (T = +25C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Note 1. Matched complementary pairs have their gain specification (h ) matched to within 10% of FE each other.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage NTE123AP I = 1mA, I = 0, Note 2 V 40 V C B (BR)CEO NTE159 I = 10A, I = 0, Note 2 80 V C B CollectorBase Breakdown Voltage NTE123AP I = 0.1mA, I = 0 V 60 V C E (BR)CBO NTE159 I = 10A, I = 0 80 V C E EmitterBase Breakdown Voltage NTE123AP I = 0.1mA, I = 0 V 6 V E C (BR)EBO NTE159 I = 10A, I = 0 5 V E C Collector Cutoff Current NTE123AP V = 35V, V = 0.4V I 0.1 A CE EB(off) CEV NTE159 I V = 50V, I = 0 50 nA CBO CB E V = 50V, I = 0, T = +75C 5 A CB E A Base Cutoff Current NTE123AP ONLY I V = 35V, V = 0.4V 0.1 A BEV CE EB(off) Emitter Cutoff Current NTE159 ONLY I 100 nA EBO ON Characteristics (Note 2) DC Current Gain h FE NTE123AP V = 1V, I = 0.1mA 20 CE C V = 1V, I = 1mA 40 CE C V = 1V, I = 10mA 80 CE C V = 1V, I = 150mA 100 300 CE C V = 1V, I = 500mA 40 CE C NTE159 V = 10V, I = 100A 25 CE C V = 10V, I = 1mA 40 CE C V = 10V, I = 10mA 50 250 CE C V = 10V, I = 100mA 40 CE C V = 10V, I = 500mA 30 CE C CollectorEmitter Saturation Voltage NTE123AP V I = 150mA, I = 15mA 0.4 V CE(sat) C B NTE159 0.15 V NTE123AP I = 500mA, I = 50mA 0.75 V C B NTE159 0.5 V BaseEmitter Saturation Voltage NTE123AP I = 150mA, I = 15mA V 0.75 0.95 V C B BE(sat) NTE159 0.9 V NTE123AP I = 500mA, I = 50mA 1.2 V C B NTE159 1.1 V Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.