NTE16003 Silicon NPN Transistor RF Power Output, P = 7W, 175MHz O Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emit- ters results in high RF current handling capability, high power gain, low base resistance, and low out- put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli- er circuits and is specifically designed for operation in the VHFUHF region. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I (max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A C Total Device Dissipation (T = +25C), P 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.4mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 30V, I = 0 0.1 mA CEO CE B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 65 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 4 V (BR)EBO E C CollectorEmitter Breakdown Voltage V I = 0 to 200mA, I = 0, Note 1 40 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 0 to 200mA, V = 1.5V, 65 V (BR)CEV C BE Note 1 Output Capacitance C V = 30V, I = 0, f = 1MHz 10 pF ob CB C Current GainBandwidth Product f V = 28V, I = 150mA, 500 MHz T CE C f = 100MHz RF Power Output, Class C, P f = 175MHz, V = 28V, 3 W out CE Unneutralized P = 1W IN Note 1. Pulsed through 25mH inductor, Duty Factor = 50%