NTE16006 Silicon NPN Transistor Low Frequency Output Amp w /High Current Gain Features: High DC Current Gain Low CollectorEmitter Saturation Voltage An M type mold package that allows easy manual and automatic insertion. Can be firmly mounted flush to PCB surface Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W C Operating Junction Temperature, T +150. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C J Storage Temperature Range, T 55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg 2 Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm in area. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 15V, I = 0 1 A CBO CB E Emitter CutOff Current I V = 15V, I = 0 10 A CEO CE B CollectorBase Voltage V I = 10 A, I = 0 20 V CBO C E CollectorEmitter Voltage V I = 1mA, I = 0 20 V CEO C B EmitterBase Voltage V I = 10 A, I = 0 15 V EBO E C DC Current Gain h V = 10V, I = 150mA, Note 2 1000 2500 FE CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA, Note 2 0.4 V CE(sat) C B Transition Frequency f V = 20V, I = 20mA, f = 200MHz 55 MHz T CB E Collector Output Capacitance C V = 10 V, I = 0, f = 1MHz 11 15 pF ob CB E Note 2. Pulse Measurement