NTE196 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE196 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE196 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE196
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; 70V; 7A; 40W; TO220
Datasheet:	NTE196 Datasheet (PDF)

Price (USD)

1: USD 3.178 ea
Line Total: USD 3.18

Availability : 0

Qty	Unit Price
1	$ 3.178
3	$ 2.856
9	$ 2.282
23	$ 2.156

NTE196 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Wed. 27 Aug to Tue. 02 Sep

MOQ : 22
Multiples : 1

Qty	Unit Price
22	$ 3.3934
100	$ 2.3892
250	$ 2.3358
500	$ 2.2557
1000	$ 2.1356
2500	$ 2.0822
5000	$ 2.0421
7500	$ 2.0155

Availability 0

Ship by Wed. 27 Aug to Tue. 02 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.9512
10	$ 2.6863
25	$ 2.629
100	$ 2.5635
250	$ 2.4491

Availability 0

Ship by Mon. 25 Aug to Wed. 27 Aug

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 3.178
3	$ 2.856
9	$ 2.282
23	$ 2.156

Availability 0

Ship by Wed. 27 Aug to Tue. 02 Sep

MOQ : 5
Multiples : 1

Qty	Unit Price
5	$ 1.815

Availability 0

Ship by Wed. 27 Aug to Tue. 02 Sep

MOQ : 30
Multiples : 10

Qty	Unit Price
30	$ 3.6831

Availability 0

Ship by Wed. 27 Aug to Tue. 02 Sep

MOQ : 5
Multiples : 1

Qty	Unit Price
5	$ 1.8727

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN NPN
Brand Nte Nte
Collector Emitter Voltage Vbrceo 70 V 70 V
Transition Frequency Ft 4 MHz 4 MHz
Power Dissipation Pd 40 W 40 W
Dc Collector Current 7 A 7 A
Dc Current Gain Hfe 30hFE 30hFE
No. Of Pins 3Pins 3Pins

We are delighted to provide the NTE196 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE196 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: h = 2.3 Min I = 7A FE C CollectorEmitter Sustaining Voltage: V = 70V Min CEO(sus) High CurrentGain Bandwidth Product: f = 4MHz Min I = 500mA (NTE196) T C = 10MHz Min I = 500mA (NTE197) C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 70 V CEO(sus) C B Collector Cutoff Current I V = 60V, I = 0 1.0 mA CEO CE B I V = 80V, V = 1.5V 100 A CEX CE EB(off) V = 80V, V = 1.5V, T = +150C 2.0 mA CE EB(off) C Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 2A, V = 4V 30 150 FE C CE I = 7A, V = 4V 2.3 C CE CollectorEmitter Saturation Voltage V I = 7A, I = 3A 3.5 V CE(sat) C B BaseEmitter ON Voltage V I = 7A, V = 4V 3.0 V BE(on) C CE Dynamic Characteristics CurrentGain Bandwidth Product f T NTE196 4 MHz I = 500mA, V = 4V, f = 1MHz, C CE test Note 2 NTE197 10 MHz Output Capacitance C V = 10V, I = 0, f = 1MHz 250 pF ob CB E SmallSignal Current Gain h I = 500mA, V = 4V, f = 50kHz 20 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. f = h f T fe test .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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