X-On Electronics has gained recognition as a prominent supplier of NTE2328 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2328 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2328 NTE

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Part No.	NTE2328
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Single Transistor - NPN - 200 V - 25 MHz - 150 W - ...
Datasheet:	NTE2328 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

6: USD 12.5557 ea
Line Total: USD 75.33

Availability - 0

MOQ: 6 Multiples: 1
Pack Size: 1

NTE2328 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Jun to Thu. 03 Jul MOQ : 6 Multiples : 1	6 : USD 12.5557 25 : USD 10.1708 100 : USD 8.9695 250 : USD 8.4623 500 : USD 8.222 1000 : USD 7.9951 2500 : USD 7.8884 5000 : USD 7.5947

0 Ship by Wed. 25 Jun to Fri. 27 Jun MOQ : 1 Multiples : 1	1 : USD 11.8595 2 : USD 9.2135 6 : USD 8.7115

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Mounting Tht Tht
Kind Of Package BULK BULK
Case To3 - Pbl To3 - Pbl
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Collector-Emitter Voltage 200 V 200 V
Collector Current 15 A 15 A
Power Dissipation 150 W 150 W
Current Gain 35 To 160 35 To 160
Frequency 25 MHz 25 MHz

We are delighted to provide the NTE2328 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2328 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2328 (NPN) & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 5.0 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 5.0 A EBO BE C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 200 V (BR)CEO C B DC Current Gain h V = 5V, I = 1A 55 160 FE1 CE C h V = 5V, I = 8A 35 60 FE2 CE C Collector Emitter Saturation Voltage V I = 10A, I = 1A 1.5 3.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 8A 1.0 1.5 V BE CE C Transistion Frequency f V = 5V, I = 1A 25 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 470 pF ob CB E.810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BC E Note: Collector connected to heat sink.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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