NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) Description: The NTE2430 is a silicon NPN transistor in a SOT89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CBO CollectorEmitter Voltage (Open Base), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V CEO EmitterBase Voltage (Open Collector), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W thJA 2 Note 1. Device mounted on a ceramic substrate area = 2.5cm , thickness = 0.7mm. Electrical Characteristics: (T = +25C unles otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 300V, I = 0 20 nA CES CE B Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C CollectorEmitter Saturation Voltage V I = 50mA, I = 4mA 500 mV CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 4mA 1.3 V BE(sat) C B DC Current Gain h V = 10V, I = 20mA 40 FE CE C Collector Capacitance C I = I = 0, V = 10, f = 1MHz 2 pF c E e CB Transitional Frequency f V = 10V, I = 10mA, f = 5MHz 70 MHz T CE C.174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) .041 EC B (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View