NTE2521 Silicon NPN Transistor Video Output for HDTV TO126 Type Package Features: High Gain Bandwidth Product: f = 400MHz Typ T High Breakdown Voltage: V 250V Min CEO High Current Low Reverse Transfer Capacitance and Excellent High Frequency Response Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V ..................................................... 250V CBO Collector to Emitter Voltage, V ................................................... 250V CEO Emitter to Base Voltage, V ........................................................ 3V EBO Collector Current, I C Continuous ............................................................... 300mA Peak .................................................................... 600mA Collector Dissipation, P C T = +25C ................................................................. 1.3W A T = +25C ................................................................. 10W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 150V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 0.1 A EBO EB C DC Current Gain h V = 10V, I = 50mA 60 120 FE CE C V = 10V, I = 250mA 20 CE C Gain Bandwidth Product f V = 30V, I = 100mA 400 MHz T CE C Output Capacitance C V = 30V, f = 1MHz 4.2 pF ob CB Reverse Transfer Capacitance C V = 30V, f = 1MHz 3.4 pF re CB Rev. 715Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 250 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 250 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 100A, I = 0 3 V (BR)EBO E C .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)