NTE2659 (NPN) & NTE2660 (PNP) Silicon Complementary Transistors Medium Power Features: Low Saturation Voltage Applications: Motor Driver DCtoDC Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Peak Pulse Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A CM Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A tot Derate above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/ C Operating Temperature Range,T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +200C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 C/W thJA1 Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . 116 C/W thJA2 Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 C/W thJC Note 1. Device mounted on P.C.B. with copper equal to 1sq. Inch minimum Electrical Characteritics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100A 35 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 10mA, Note 2 25 V (BR)CEO C EmitterBase Breakdown Voltage V I = 100A 5 V (BR)EBO E Collector CutOff Current I V = 30V 0.1 A CBO CB 10 V = 30V, T = +100C CB A Emitter CutOff Current I V = 4V 0.1 A EBO EB CollectorEmitter Saturation Voltage V I = 1A, I = 100mA, Note 2 0.12 0.3 V CE(sat) C B I = 2A, I = 200mA, Note 2 0.23 0.5 C B BaseEmitter Saturation Voltage V I = 1A, I = 100mA, Note 2 0.9 1.25 V BE(sat) C B BaseEmitter TurnOn Voltage V I = 1A, V = 2V, Note 2 0.8 1 V BE(on) C CE Note 2. Measured under pulsed conditions: Pulse Width = 300 s, Duty Cycle 2%.Electrical Characteritics (Contd) : (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Forward Current Transfer Ratio h I = 50mA, V = 2V, Note 2 70 200 FE C CE I = 1A, V = 2V, Note 2 100 200 300 C CE I = 2A, V = 2V, Note 2 75 150 C CE I = 6A, V = 2V, Note 2 15 50 C CE Transition Frequency NTE2659 f I = 100mA, V = 5V, f = 100MHz 150 240 MHz T C CE NTE2660 100 160 Output Capacitence NTE2659 C V = 10V, f = 1MHz 25 50 pF obo CB NTE2660 I = 100mA, V = 5V, f = 100MHz 55 100 C CE Switching Times NTE2659 t I = 500mA, V = 10V, I =I =50mA 55 ns on C CC B1 B2 t 300 off NTE2660 t 40 ns on t 450 off Note 2. Measured under pulsed conditions: Pulse Width = 300 s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Seating Plane Max .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max