NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for highvoltage, high speed, power switching in inductive circuits where fall time is critical. Typical applications include switching regulators, PWM inverters, solenoid and relay drivers. Absolute Maximum Ratings: CollectorEmitter Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V B CEO CollectorEmitter Voltage (V = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V BE CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (t 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A p Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Total Power Dissipation (T +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, V = 0 1 mA CES CEV BE Emitter Cutoff Current I V = 8V, I = 0 1 mA EBO EB C CollectorBase Voltage V I = 1mA, I = 0 800 V CBO C E CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 325 V CEO(su C B s) CollectorEmitter Saturation Voltage V I = 8A, I = 2.5A, Note 1 3.3 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 2.5A, Note 1 2.2 V BE(sat) C B DC Current Gain h V = 10V, I = 2.5A, Note 1 15 FE CE C Current GainBandwidth Product f V = 10V, I = 500mA 10 MHz T CE C Second Breakdown Collector Current I V = 25V, Note 2 4 A S/b CE Note 1. Pulse test: Pulse Width = 300 s, Duty Cycle = 1.5%. Note 2. Pulsed: 1sec, nonrepetitive pulse.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit TurnOn Time t V = 250V, I = 5A, I = 1A 0.2 s on CC C B1 Storage Time t V = 250V, I = 5A, 1.7 s s CC C I = I = 1A B1 B2 Fall Time t 0.3 s f Fall Time t V = 40V, I = 8A, 1.0 s f CC C I = I = 2.5A B1 B2 .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case