NTE289A (NPN) & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: High Breakdown Voltage: V = 80V Min (BR)CEO High Current: I = 500mA C Low Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V 100V CBO CollectorEmitter Voltage, V 80V CEO EmitterBase Voltage, V 5V EBO Collector Current , I C Continuous . 500mA Peak 800mA Collector Dissipation, P 600mW C Operating Junction Temperature, T . +150C J Storage Temperature Range, T 55 to +150C stg Electrical Characteristics: (T = +25C unless otherewise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = Open 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 50mA 100 200 FE (1) CE C h V = 5V, I = 400mA (Pulse) 35 FE (2) CE C CollectorEmitter Saturation Voltage V CE(sat) NTE289A I = 400mA, I = 40mA 0.2 0.6 V C B NTE290A 0.25 0.60 V CurrentGain Bandwidth Product f V = 10V, I = 10mA 120 MHz T CE C Output Capacitance C ob NTE289A V = 10V, f = 1MHz 5 pF CB NTE290A 9 pF Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (h ) matched to FE within 10% of each other. Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and NTE290A (PNP)..135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max