NTE319P NTE

NTE319P electronic component of NTE
NTE319P NTE
NTE319P Bipolar Transistors - BJT
NTE319P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE319P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE319P Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE319P
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 20V; 50mA; 625mW; TO92
Datasheet: NTE319P Datasheet (PDF)
Price (USD)
50: USD 1.485 ea
Line Total: USD 74.25 
Availability : 0
  
QtyUnit Price
50$ 1.485
100$ 0.8575
200$ 0.7236
500$ 0.6696

Availability 0
Ship by Tue. 02 Sep to Mon. 08 Sep
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 1.485
100$ 0.8575
200$ 0.7236
500$ 0.6696


Availability 0
Ship by Fri. 29 Aug to Tue. 02 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5062
3$ 1.3569
10$ 1.2076
16$ 0.9905
44$ 0.9363

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE319P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE319P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE319P Silicon NPN Transistor w VHF Amp /Forward AGC Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case, 10sec), T . . . . . . . . . . . . . . . +230C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100 A, I = 0 20 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100 A, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 20V, I = 0 50 nA CBO CB E DC Current Gain h I = 2mA, V = 10V 20 80 220 FE C CE Collector Saturation Voltage V I = 10mA, I = 5mA 2.75 V CE(sat) C B CollectorEmitter Sustaining Voltage V I = 1mA, I = 0 20 V CEO(sus) C B Current GainBandwidth Product f I = 2mA, V = 10V, 300 500 MHz T C CE f = 100MHz Power Gain G V = 2V, f = 45MHz 27 29 dB pe BE Capacitance C I = 0, V = 10V, f = 1MHz 0.13 0.22 pF cb E CB Noise Figure NF V = 2V, f = 45MHz 2.7 5.0 dB BE.135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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