NTE342 Silicon NPN Transistor RF Power Output (P = 6W, 175MHz) O Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: High Power Gain: G 10dB (V = 13.5V, P = 6W, f = 175MHz) pe CC O Ability to Withstand more than 20:1 VSWR Load when Operated at: V = 15.2V, P = 6W, f = 175MHz CC O Application: 4 to 5 Watt Output Power Amplifiers Applications in VHF band Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO Collector-Emitter Voltage (R = ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V BE CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Collector Dissipation, P C T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Thermal Resistance, Junction-to-Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 C/W thJA Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 C/W thJCElectrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage V I = 5mA, I = 0 4 - - V (BR)EBO E C Emitter to Base Breakdown Voltage V I = 10mA, I = 0 35 - - V (BR)CBO C E Collector to Base Breakdown Voltage V I = 50mA, R = 17 - - V (BR)CEO C BE Collector to Emitter Collector Cutoff Current I V = 25V, I = 0 - - 500 A CBO CB E Emitter Cutoff Current I V = 3V, I = 0 - - 500 A EBO EB C DC Forward Current Gain h V = 10V, I = 100mA, Note 1 10 50 180 - FE CE C Output Power P V = 13.5V, P = 600mW, 6 7 - W O CC in f = 175MHz Collector Efficiency 60 70 - % C Note 1. Pulse Test: Pulse Width = 150s, Duty Cycle = 5%. .358 (9.1) .051 (1.3) .142 (3.62) Dia E .126 (3.2) .485 (12.32) .395 (9.05) BE C .189 (4.8) .485 (12.32) Min .100 (2.54) .019 (0.48) .177 (4.5) .347 (9.5) .122 (3.1)