NTE345 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE345 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE345 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE345
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 5A; 65W; T72H; Pout:30W
Datasheet:	NTE345 Datasheet (PDF)

Price (USD)

1: USD 76.5675 ea
Line Total: USD 76.57

Availability : 0

Qty	Unit Price
1	$ 76.5675
10	$ 50.706
25	$ 47.3256
50	$ 44.3772

NTE345 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 02 Sep to Mon. 08 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 76.5675
10	$ 50.706
25	$ 47.3256
50	$ 44.3772

Availability 0

Ship by Fri. 29 Aug to Tue. 02 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 65.7158

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Mounting Screw Screw
Case T72h T72h
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 30 W 30 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 5 A 5 A
Power Dissipation 65 W 65 W
Frequency 130 To 175 MHz 130 To 175 MHz

We are delighted to provide the NTE345 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE345 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE345 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V largesignal amplifier applications in industrial and commercial FM equipment operating to 175MHz. This device is ideally suited for marine radio applications. Features: Specified 13.6V, 160MHz Characteristics: Output Power = 30W Minimum Gain = 9dB Efficiency = 60% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 15mA, I = 0 36 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C ON Characteristics DC Current Gain h I = 1A, V = 5V 5 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1 to 1MHz 110 130 pF ob CB E Functional Tests (V = 13.6V unless otherwise specified) CC CommonEmitter Amplifier G P = 30W, f = 160MHz 9 10 dB PE out Power Gain Collector Efficiency P = 30W, f = 160MHz 60 % out1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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