NTE368 Silicon NPN Transistor RF Power Output P = 60W 512MHz O Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB Efficiency = 55% Characterized with Series Equivalent LargeSignal Impedance Parameters BuiltIn Matching Network for Broadband Operation Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR 16volt High Line and Overdrive Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector CurrentContinuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 16 V (BR)CEO C B V I = 50mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +25C 15 mA CES CE BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 5V, I = 6A 20 70 150 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 1MHz 130 150 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 60W, V = 12.5V, f = 470MHz 4.4 5.0 dB PE OUT CC Input Power P 19 22 W in Collector Efficiency 55 60 % Output Mismatch Stress V = 16V, P = 26W, f = 470MHz, No Degradation in CC in VSWR = 20:1, All Phase Angles Output Power Note 1. = Mismatch stress factor the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .215 (5.48) .205 (5.18) .122 (3.1) Dia EB .405 (10.3) Min CE .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)