NTE374 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE374 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE374 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE374
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: PNP; bipolar; 16V; 1.5A; 1W; TO126
Datasheet:	NTE374 Datasheet (PDF)

Price (USD)

1: USD 2.1847 ea
Line Total: USD 2.18

Availability : 0

Qty	Unit Price
1	$ 2.1847
3	$ 1.9676
10	$ 1.7368
11	$ 1.6826
25	$ 1.5741

NTE374 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 02 Sep to Mon. 08 Sep

MOQ : 40
Multiples : 1

Qty	Unit Price
40	$ 2.07
50	$ 1.674
100	$ 1.188
200	$ 1.1124
500	$ 1.026

Availability 0

Ship by Tue. 02 Sep to Mon. 08 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.4154
10	$ 2.1458
25	$ 2.0311
100	$ 1.8755
250	$ 1.7246

Availability 0

Ship by Fri. 29 Aug to Tue. 02 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.1847
3	$ 1.9676
10	$ 1.7368
11	$ 1.6826
25	$ 1.5741

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To126 To126
Type Of Transistor Pnp Pnp
Collector-Emitter Voltage 16 V 16 V
Collector Current 1.5 A 1.5 A
Power Dissipation 1 W 1 W
Current Gain 30 To 200 30 To 200
Frequency 140 MHz 140 MHz

We are delighted to provide the NTE374 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE374 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE373 (NPN) & NTE374 (PNP) Silicon Complementary Transistors Audio Amplifier, Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 180 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 10mA, R = 160 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 160V, I = 0 10 A CBO CB E DC Current Gain h V = 5V, I = 150mA 60 200 FE1 CE C h V = 5V, I = 500mA 30 FE2 CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 1 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 150mA 1.5 V BE CE C Transistion Frequency f V = 5V, I = 500mA 140 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 14 pF ob CB E Rev. 710.330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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