NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for highvoltage, high speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115 and 220V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits. Features: V = 400V CEO(sus) Reverse Bias SOA with Inductive Loads T = +100C C 700V Blocking Capability Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Emitter Current, I E Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W thJC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Lead Temperature (During Soldering, 1/8 from case for 5sec), T . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 10mA, I = 0 400 V CEO(sus) C B Collector Cutoff Current I V = 700V, V = 1.5V 1 mA CEV CEV BE(off) V = 700V, V = 1.5V, 5 mA CEV BE(off) T = +100C C Emitter Cutoff Current I V = 9V, I = 0 1 mA EBO EB C ON Characteristics (Note 2) DC Current Gain h I = 5A, V = 5V 8 40 FE C CE I = 8A, V = 5V 6 30 C CE CollectorEmitter Saturation Voltage V I = 5A, I = 1A 1.0 V CE(sat) C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3.0 V C B I = 8A, I = 1.6A, T = +100C 2.0 V C B C BaseEmitter Saturation Voltage V I = 5A, I = 1A 1.2 V BE(sat) C B I = 8A, I = 1.6A 1.6 V C B I = 8A, I = 1.6A, T = +100C 1.5 V C B C Dynamic Characteristics Current GainBandwidth Product f I = 500mA, V = 10V, f = 1MHz 4 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 0.1MHz 180 pF ob CB E Switching Characteristics Resistive Load Delay Time t 0.06 0.1 s d V = 125V, I = 8A, Rise Time t CC C 0.45 1.0 s r I = I = 1.6A, t = 25 s, B1 B2 p Storage Tme t 1.3 3.0 s s Duty Cycle Duty Cycle 1% 1% Fall Time t 0.2 0.7 s f Inductive Load, Clamped Voltage Storage Time t 0.92 2.3 s sv II = 8A, V = 8A, V = 300V = 300V, I, I = 1.6A, = 1.6A, CC clclaammpp B1B1 V = 5V, T = +100C Crossover Time t BE(off) C 0.12 0.7 s c Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.