NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications. Applications: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEV EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . +275C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 500 V CEO(sus) C B Collector Cutoff Current I V = 800V, V = 1.5V 0.25 mA CEV CEV EB(off) I V = 800V, R = 50 , T = +100C 5.0 mA CER CE BE C Emitter Cutoff Current I V = 6V, I = 0 1.0 mA EBO BE C ON Characteristics (Note 2) DC Current Gain h V = 5V, I = 5A 10 60 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 2A 1.8 V CE(sat) C B I = 20A, I = 6.7A 5.0 V C B BaseEmitter Saturation Voltage V I = 10A, I = 2A 1.8 V BE(sat) C B Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 1kHz 125 500 pF cb CB E test Switching Characteristics (Resistive Load) Dealy Time t V = 250V, I = 10A, I = 2A, 0.02 0.1 s d CC C B1 V = 5V, t = 10 s, BE(off) p Rise Time t 0.3 0.7 s r Duty Cycle Duty Cycle 2% 2% Storage Time t 1.6 4.0 s s Fall Time t 0.3 0.7 s f Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case