Product Information

BC53PAS

BC53PAS electronic component of NXP

Datasheet
TRANSISTOR, BIPOLAR, AEC-Q101, PNP, -80V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4498 ea
Line Total: USD 0.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.4498
10 : USD 0.3357
100 : USD 0.2087
250 : USD 0.1746
500 : USD 0.1444
1000 : USD 0.1104

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage V Br Ceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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BC51PAS BC52PAS BC53PAS 1 ) 45 V/60 V/80 V, 1 A PNP medium power transistors Rev. 1 19 June 2015 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Table 1. Product overview 1 Type number Package NPN complement BC51PAS DFN2020D-3 SOT1061D BC54PAS BC52PAS BC55PAS BC53PAS BC56PAS 1 Valid for all available selection groups. 1.2 Features and benefits High collector current capability Three current gain selections I and I C CM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base CEO BC51PAS series - - 45 V BC52PAS series - - 60 V BC53PAS series - - 80 VBC51PAS BC52PAS BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit I collector current - - 1A C I peak collector current single pulse t 1ms - - 2A CM p 1 h DC current gain V = 2V I = 150 mA 63 - 250 FE CE C 1 h selection -10 V = 2V I = 150 mA 63 - 160 FE CE C 1 h selection -16 V = 2V I = 150 mA 100 - 250 FE CE C 1 Pulse test: t 300 ms 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector P V UDQVSDUHQW WRS YLHZ 7 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version BC51PAS series DFN2020D-3 plastic thermal enhanced ultra thin small SOT1061D outline package no leads 3 terminals BC52PAS series body 2 2 0.65 mm. BC53PAS series 1 Valid for all available selection groups. BC51 52 53PAS SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 19 June 2015 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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