Product Information

BC856AT,115

BC856AT,115 electronic component of NXP

Datasheet
Bipolar Transistors - BJT TRANS GP TAPE-7
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0356 ea
Line Total: USD 106.8

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 1
3000 : USD 0.0356
21000 : USD 0.033

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Maximum Power Dissipation
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheet BC856T BC857T PNP general purpose transistors series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification, especially in portable equipment. DESCRIPTION handbook, halfpage PNP transistor in an SC-75 (SOT416) plastic package. 3 3 NPN complements: BC846T BC847T series. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE Top view MAM362 BC856AT 3A BC856BT 3B BC857AT 3E Fig.1 Simplified outline (SC-75 SOT416) and BC857BT 3F symbol. BC857CT 3G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC856AT BC856BT 80 V BC857AT BC857BT BC857CT 50 V V collector-emitter voltage open base CEO BC856AT BC856BT 65 V BC857AT BC857BT BC857CT 45 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 150 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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