BC857BT,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheet BC856T BC857T PNP general purpose transistors series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification, especially in portable equipment. DESCRIPTION handbook, halfpage PNP transistor in an SC-75 (SOT416) plastic package. 3 3 NPN complements: BC846T BC847T series. 1 MARKING 2 1 2 TYPE NUMBER MARKING CODE Top view MAM362 BC856AT 3A BC856BT 3B BC857AT 3E Fig.1 Simplified outline (SC-75 SOT416) and BC857BT 3F symbol. BC857CT 3G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC856AT BC856BT 80 V BC857AT BC857BT BC857CT 50 V V collector-emitter voltage open base CEO BC856AT BC856BT 65 V BC857AT BC857BT BC857CT 45 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 150 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2