BUJ302A,127 NXP

BUJ302A NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I peak collector current Fig. 1 Fig. 2 Fig. 3 - - 8 A CM P total power dissipation T 25 C Fig. 4 - - 80 W tot mb V collector-emitter peak V = 0 V - - 1050 V CESM BE voltage Static characteristics h DC current gain I = 0.1 A V = 5 V T = 25 C 1 48 66 100 FE C CE mb Fig. 11 I = 0.8 A V = 3 V T = 25 C 1 25 42 50 C CE mb Fig. 12 1 Pulse test: pulse duration 300 s, duty cycle 2 %WeEn Semiconductors BUJ302A NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C mb 2 C collector B 3 E emitter E mb C mounting base connected to sym123 collector 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302A TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BUJ302A All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 9 October 2018 2 / 12